SnO2 Nanowires Used to Fabricate Fully Transparent Thin-Film Transistor Devices
نویسندگان
چکیده
منابع مشابه
Fully transparent thin-film transistor devices based on SnO2 nanowires.
We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performa...
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ژورنال
عنوان ژورنال: MRS Bulletin
سال: 2007
ISSN: 0883-7694,1938-1425
DOI: 10.1557/mrs2007.139